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049692 | ![]() | Diode 5mA 16kV 0.08ms | всего: 90 pcs маг ДП: 90 pcs |
| Diode | Одиночный | Быстрый диод | 5 мА | 16 kV | DO312 | ||||
031726 | ![]() | Diode 0.15A 100V 4ns 200mW | всего: 118550 pcs маг ДП: 118550 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 75 V | SOD123 | ||||
016327 | ![]() | Schottky diode 2X0.2A 30V common anode | всего: 7280 pcs маг ДП: 7280 pcs |
| 2 Diode | Общий анод | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
026721 | ![]() | Schottky diode 0.2A 30V SOT23 Single | всего: 7060 pcs маг ДП: 1060 pcs |
| Diode | Одиночный | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
050633 | ![]() | Schottky diode 2X0.2A 30V series connection | всего: 23000 pcs маг ДП: 2000 pcs |
| 2 Diode | Полумост | Диод Шоттки | 0.2 А | 30 V | SOT23 | FOSAN | |||
050634 | ![]() | Schottky diode 2X0.2A 30V common cathode | всего: 8150 pcs маг ДП: 8150 pcs |
| Diode | Общий катод | Диод Шоттки | 0.2 А | 30 V | SOT23 | FOSAN | |||
003417 | ![]() | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | всего: 89900 pcs маг ДП: 89900 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 75 V | SOD80C | SEMTECH | |||
050638 | ![]() | Diode Two diodes in series Vr=80B, If=0.2A | всего: 23620 pcs маг ДП: 23620 pcs |
| Полумост | Быстрый диод | 0.2 А | 80 V | SOT23 | FOSAN | ||||
026725 | ![]() | Diode 0.2A 100V 15ns serial connection | всего: 770 pcs маг ДП: 770 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.2 А | 100 V | SOT23 | TASUND | |||
027650 | ![]() | Diode 0.2A 100V | всего: 164415 pcs маг ДП: 99415 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 100 V | DO35 | SEMTECH | |||
024726 | ![]() | Diode 0.2A 200V Sod123 | всего: 11650 pcs маг ДП: 11650 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 200 V | SOD123 | CJ | |||
005836 | ![]() | Diode 0.2A 250V 50ns | всего: 9898 pcs маг ДП: 9898 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 250 V | DO35 | ||||
027575 | ![]() | Diode Two diodes with a common anode. Vr = 75V, If = 215mA Cd = 2pF trr = 4ns, High-speed switching diodes | всего: 9290 pcs маг ДП: 3290 pcs |
| 2 Diode | Общий анод | Быстрый диод | 0.215 А | 75 V | SOT23 | ||||
004006 | ![]() | Diode Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes | всего: 7860 pcs маг ДП: 7860 pcs |
| 2 Diode | Общий катод | Быстрый диод | 0.215 А | 100 V | SOT23 | ||||
031507 | ![]() | Diode Diode assembly two half-bridge 300V 225MA 50ns | всего: 304 pcs маг ДП: 304 pcs |
| 4 Diode | 2 полумоста | Быстрый диод | 0.225 А | 300 V | SOT23-6 | DIODES | |||
005954 | ![]() | Diode 0.2A 200V 50ns | всего: 19960 pcs маг ДП: 19960 pcs |
| Diode | Одиночный | Быстрый диод | 0.25 А | 200 V | SOD80C | SEMTECH | |||
023535 | ![]() | Diode 0.15A 100V 4ns 200mW | всего: 4200 pcs маг ДП: 4200 pcs |
| Diode | Одиночный | Быстрый диод | 0.3 А | 100 V | SOD323 | ||||
032970 | ![]() | Diode | всего: 32210 pcs маг ДП: 32210 pcs |
| Diode | Одиночный | Быстрый диод | 0.3 А | 100 V | SOD523 | ||||
037086 | ![]() | Diode 0.35A 12kV is used in magnetron power circuits, for microwave ovens | всего: 27 pcs маг ДП: 27 pcs |
| Diode | Одиночный | Выпрямительный диод | 0.35 А | 12 kV | SK | ||||
029211 | ![]() | Diode 225mA 250V 50ns serial connection | всего: 1380 pcs маг ДП: 1380 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.4 А | 200 V | SOT23 | CJ | |||
005403 | ![]() | Diode bridge Diode Bridge 0.5A 600V | всего: 14350 pcs маг ДП: 2350 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
028473 | ![]() | Diode bridge Diode Bridge 0.5A 600V | всего: 6820 pcs маг ДП: 1820 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
029188 | ![]() | Diode bridge Diode Bridge, 0.5A 600V | всего: 55715 pcs маг ДП: 5715 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
029189 | ![]() | Diode bridge Diode Bridge 0.5A 1000V | всего: 49375 pcs маг ДП: 9375 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 1 kV | |||||
012858 | ![]() | Diode bridge 0.8A 1000V | всего: 12194 pcs маг ДП: 2194 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
013930 | ![]() | Diode bridge MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER - 0.8A 1000V | всего: 28880 pcs маг ДП: 4880 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
002105 | ![]() | Schottky diode 20V 1A/25Ap | всего: 21830 pcs маг ДП: 2830 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 20 V | DO41 | MIC | |||
007209 | ![]() | Schottky diode Schottky diode 1A 20V | всего: 3555 pcs маг ДП: 3555 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 20 V | SMA | ||||
007194 | ![]() | Schottky diode 30V 1A/25Ap | всего: 5289 pcs маг ДП: 5289 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 30 V | DO41 | MIC | |||
004808 | ![]() | Schottky diode 40V 1A/25Ap | всего: 25095 pcs маг ДП: 1095 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | DO41 | MIC | |||
006661 | ![]() | Schottky diode Schottky diode 1A 40V | всего: 39752 pcs маг ДП: 39752 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SMA | ||||
029028 | ![]() | Schottky diode 40V 1A | всего: 28000 pcs маг ДП: 28000 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD323 | ||||
036054 | ![]() | Schottky diode Diode 1A, 40V. | всего: 29900 pcs маг ДП: 29900 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123-FL | ||||
036057 | ![]() | Schottky diode Schottky diode 1A, 40V. | всего: 5120 pcs маг ДП: 2120 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD523 | ||||
040118 | ![]() | Schottky diode Schottky diode 1A, 40V. | всего: 20400 pcs маг ДП: 20400 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123 | ||||
050637 | ![]() | Schottky diode Schottky diode 1A, 40V. | всего: 24900 pcs маг ДП: 24900 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123 | FOSAN | |||
029199 | ![]() | Diode | всего: 26931 pcs маг ДП: 1931 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 50 V | DO41 | MIC | |||
004240 | ![]() | Schottky diode Schottky diode 1A, 60B | всего: 47300 pcs маг ДП: 47300 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | SMA | ||||
029196 | ![]() | Schottky diode 1A 60V | всего: 7160 pcs маг ДП: 7160 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | DO41 | MIC | |||
016328 | ![]() | Schottky diode Schottky diode 1A, 80B | всего: 8270 pcs маг ДП: 8270 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 80 V | SMA | ||||
029198 | ![]() | Schottky diode 1A 100V | всего: 5730 pcs маг ДП: 5730 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 100 V | DO41 | MIC | |||
007175 | ![]() | Diode 1A 400V 35ns | всего: 29927 pcs маг ДП: 11927 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 400 V | DO41 | ||||
029200 | ![]() | Diode | всего: 30230 pcs маг ДП: 230 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 400 V | DO41 | MIC | |||
005635 | ![]() | Diode 1A 600V 35ns | всего: 15440 pcs маг ДП: 440 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
006780 | ![]() | Diode 1A 600V 150ns | всего: 17330 pcs маг ДП: 5330 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
036052 | ![]() | Diode bridge Diode Bridge 1A 800V | всего: 1148 pcs маг ДП: 1148 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 800 V | |||||
004328 | ![]() | Diode 1A 1000V | всего: 53630 pcs маг ДП: 53630 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | SMA | ||||
005903 | ![]() | Diode 1A 1000V 75ns | всего: 17260 pcs маг ДП: 4260 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | DO41 | ||||
006200 | ![]() | Diode 1A 1000V | всего: 7020 pcs маг ДП: 7020 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | R-1 | ||||
006856 | ![]() | Diode bridge 1-phase bridge, 1A, 1000V, case: DIP4 (pitch: 5.08 mm) | всего: 12759 pcs маг ДП: 10259 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 1 kV | DIP4 | SEP |
A semiconductor diode consists of either p-type and n-type semiconductors (semiconductors with different types of impurity conductivity), or semiconductor and metal (Schottky diode). The contact between semiconductors is called a pn junction and conducts current in one direction (has one-way conductivity).
Special types of diodes:
- Zener diodes (Zener diodes) are diodes operating in the mode of (reversible) breakdown of the pn junction (see the reverse branch of the current-voltage characteristic). Used for voltage stabilization.
- Tunnel diodes (Leo Esaki diodes) are diodes that use quantum mechanical effects. On the current-voltage characteristic, they have a region of the so-called "negative resistance". They are used as amplifiers, generators, etc.
- Inverted diodes are diodes that have a much lower on-state voltage drop than conventional diodes. The principle of operation of such diodes is based on the tunneling effect.
- Point diodes are diodes characterized by a low p-n-junction capacitance and the presence on the reverse branch of the current-voltage characteristic of a section with a negative differential resistance. Previously, they were used in microwave technology (due to the low capacity of the p-n-junction) and were used in generators and amplifiers (due to the presence on the reverse branch of the current-voltage characteristic of a section with negative differential resistance).
- Varicaps (John Geumm diodes) are diodes with a large capacity when the pn junction is locked, depending on the applied reverse voltage. They are used as variable capacitors.
- LEDs (Henry Round diodes) are diodes that differ from ordinary diodes in that they emit light in the visible range (and not in the infrared) when electrons and holes recombine in the pn junction. LEDs are also produced with radiation in the infrared range, and more recently - in the ultraviolet.
- Semiconductor lasers are diodes that are similar in design to LEDs, but have an optical resonator. Emit coherent light.
- Photodiodes are diodes that are exposed to light.
- A solar cell is a diode similar to a photodiode but operates without bias. Light falling on the pn junction causes the movement of electrons and the generation of current.
- Gunn diodes are diodes used for generating and converting frequencies in the microwave range.
- The Schottky diode is a low voltage drop diode with direct power on.
- An avalanche diode is a diode whose principle of operation is based on an avalanche breakdown (see the reverse section of the current-voltage characteristic). It is used to protect circuits from overvoltage.
- Avalanche-transit diode is a diode, the principle of operation of which is based on avalanche multiplication of charge carriers. It is used to generate oscillations in microwave technology.
- Magnetodiode is a diode, the current-voltage characteristic of which significantly depends on the value of the magnetic field induction and the location of its vector relative to the plane of the p-n-junction.
- Stabilizers are diodes, during the operation of which a section of the branch of the current-voltage characteristic is used, corresponding to the "forward voltage" on the diode.
- A mixing diode is a diode designed to multiply two high-frequency signals.
- pin diode - a diode with a lower capacitance due to the presence between heavily doped p- and n-type semiconductors of a material characterized by its own conductivity. Used in microwave technology, power electronics, as a photodetector.
* the full version of the article can be found atlink