Shown goods: from 1 to 50 (263 total)
In stock
Promotions
Discounted
| Code | photo_camera | Remains | shopping_cart | 1 | 2 | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 049692 |  | Diode 5mA 16kV 0.08ms | total: 90 pcs маг ДП: 90 pcs |
| Быстрый диод | Diode | Одиночный | 5 мА | 16 kV | 80 нс | DO312 | ||||
| 031726 |  | Diode 0.15A 100V 4ns 200mW | total: 75600 pcs маг ДП: 75600 pcs |
| Быстрый диод | Diode | Одиночный | 0.15 А | 75 V | 4 нс | SOD123 | ||||
| 016327 |  | Schottky diode 2X0.2A 30V common anode | total: 6380 pcs маг ДП: 6380 pcs |
| Диод Шоттки | 2 Diode | Общий анод | 0.2 А | 30 V | SOT23 | |||||
| 026721 |  | Schottky diode 0.2A 30V SOT23 Single | total: 6800 pcs маг ДП: 800 pcs |
| Диод Шоттки | Diode | Одиночный | 0.2 А | 30 V | SOT23 | |||||
| 050633 | | Schottky diode 2X0.2A 30V series connection | total: 22140 pcs маг ДП: 1140 pcs |
| FOSAN | Диод Шоттки | 2 Diode | Полумост | 0.2 А | 30 V | SOT23 | ||||
| 003417 |  | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | total: 67600 pcs маг ДП: 67600 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.2 А | 75 V | 4 нс | SOD80C | |||
| 050638 |  | Diode Two diodes in series Vr=80B, If=0.2A | total: 18060 pcs маг ДП: 18060 pcs |
| FOSAN | Быстрый диод | Полумост | 0.2 А | 80 V | 4 нс | SOT23 | ||||
| 026725 | | Diode 0.2A 100V 15ns serial connection | total: 720 pcs маг ДП: 720 pcs |
| TASUND | Быстрый диод | 2 Diode | Полумост | 0.2 А | 100 V | 15 нс | SOT23 | |||
| 027650 |  | Diode 0.2A 100V | total: 156865 pcs маг ДП: 91865 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.2 А | 100 V | 4 нс | DO35 | |||
| 024726 | | Diode 0.2A 200V Sod123 | total: 11600 pcs маг ДП: 11600 pcs |
| CJ | Быстрый диод | Diode | Одиночный | 0.2 А | 200 V | 50 нс | SOD123 | |||
| 005836 | | Diode 0.2A 250V 50ns | total: 9848 pcs маг ДП: 9848 pcs |
| Быстрый диод | Diode | Одиночный | 0.2 А | 250 V | 50 нс | DO35 | ||||
| 027575 | | Diode Two diodes with a common anode. Vr = 75V, If = 215mA Cd = 2pF trr = 4ns, High-speed switching diodes | total: 8940 pcs маг ДП: 2940 pcs |
| Быстрый диод | 2 Diode | Общий анод | 0.215 А | 75 V | 4 нс | SOT23 | ||||
| 004006 |  | Diode Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes | total: 7620 pcs маг ДП: 7620 pcs |
| Быстрый диод | 2 Diode | Общий катод | 0.215 А | 100 V | 4 нс | SOT23 | ||||
| 031507 |  | Diode Diode assembly two half-bridge 300V 225MA 50ns | total: 304 pcs маг ДП: 304 pcs |
| DIODES | Быстрый диод | 4 Diode | 2 полумоста | 0.225 А | 300 V | 50 нс | SOT23-6 | |||
| 005954 |  | Diode 0.2A 200V 50ns | total: 19940 pcs маг ДП: 19940 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.25 А | 200 V | 50 нс | SOD80C | |||
| 023535 |  | Diode 0.15A 100V 4ns 200mW | total: 3600 pcs маг ДП: 3600 pcs |
| Быстрый диод | Diode | Одиночный | 0.3 А | 100 V | 4 нс | SOD323 | ||||
| 032970 |  | Diode | total: 32060 pcs маг ДП: 32060 pcs |
| Быстрый диод | Diode | Одиночный | 0.3 А | 100 V | 4 нс | SOD523 | ||||
| 037086 |  | Diode 0.35A 12kV is used in magnetron power circuits, for microwave ovens | total: 26 pcs маг ДП: 26 pcs |
| SK | Выпрямительный диод | Diode | Одиночный | 0.35 А | 12 kV | |||||
| 029211 | | Diode 225mA 250V 50ns serial connection | total: 1360 pcs маг ДП: 1360 pcs |
| CJ | Быстрый диод | 2 Diode | Полумост | 0.4 А | 200 V | 50 нс | SOT23 | |||
| 002105 |  | Schottky diode 20V 1A/25Ap | total: 21230 pcs маг ДП: 2230 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 20 V | DO41 | ||||
| 007209 |  | Schottky diode Schottky diode 1A 20V | total: 3405 pcs маг ДП: 3405 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 20 V | SMA | |||||
| 007194 | | Schottky diode 30V 1A/25Ap | total: 5169 pcs маг ДП: 5169 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 30 V | DO41 | ||||
| 004808 | | Schottky diode 40V 1A/25Ap | total: 24105 pcs маг ДП: 105 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 40 V | DO41 | ||||
| 006661 |  | Schottky diode Schottky diode 1A 40V | total: 20632 pcs маг ДП: 20632 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SMA | |||||
| 029028 | | Schottky diode 40V 1A | total: 27350 pcs маг ДП: 27350 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD323 | |||||
| 036054 |  | Schottky diode Diode 1A, 40V. | total: 29700 pcs маг ДП: 29700 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123-FL | |||||
| 036057 | | Schottky diode Schottky diode 1A, 40V. | total: 5120 pcs маг ДП: 2120 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD523 | |||||
| 040118 | | Schottky diode Schottky diode 1A, 40V. | total: 17200 pcs маг ДП: 17200 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123 | |||||
| 050637 | | Schottky diode Schottky diode 1A, 40V. | total: 24900 pcs маг ДП: 24900 pcs |
| FOSAN | Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123 | ||||
| 029199 |  | Diode | total: 26751 pcs маг ДП: 1751 pcs |
| MIC | Выпрямительный диод | Diode | Одиночный | 1 А | 50 V | DO41 | ||||
| 004240 | | Schottky diode Schottky diode 1A, 60B | total: 44350 pcs маг ДП: 44350 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 60 V | SMA | |||||
| 029196 | | Schottky diode 1A 60V | total: 6860 pcs маг ДП: 6860 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 60 V | DO41 | ||||
| 016328 | | Schottky diode Schottky diode 1A, 80B | total: 8090 pcs маг ДП: 8090 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 80 V | SMA | |||||
| 029198 | | Schottky diode 1A 100V | total: 5080 pcs маг ДП: 5080 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 100 V | DO41 | ||||
| 007175 |  | Diode 1A 400V 35ns | total: 29877 pcs маг ДП: 11877 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 400 V | 35 нс | DO41 | ||||
| 029200 | | Diode | total: 29960 pcs маг ДП: 460 pcs |
| MIC | Выпрямительный диод | Diode | Одиночный | 1 А | 400 V | DO41 | ||||
| 005635 |  | Diode 1A 600V 35ns | total: 15000 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 600 V | 35 нс | DO41 | ||||
| 006780 |  | Diode 1A 600V 150ns | total: 17330 pcs маг ДП: 5330 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 600 V | 150 нс | DO41 | ||||
| 004328 |  | Diode 1A 1000V | total: 51780 pcs маг ДП: 51780 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | 1.8 мкс | SMA | ||||
| 005903 |  | Diode 1A 1000V 75ns | total: 16910 pcs маг ДП: 3910 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | DO41 | ||||
| 006200 |  | Diode 1A 1000V | total: 6910 pcs маг ДП: 6910 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | R-1 | |||||
| 011731 | | Diode 1A 1000V | total: 9890 pcs маг ДП: 9890 pcs |
| MIC | Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | DO41 | |||
| 016666 | | Diode 1A 1000V 75ns | total: 67260 pcs маг ДП: 59260 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | SMA | ||||
| 028275 | | Diode | total: 114400 pcs маг ДП: 114400 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | SOD123-FL | |||||
| 029185 | | Diode | total: 19214 pcs маг ДП: 4214 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | DO41 | ||||
| 034313 | | Diode 1000V 1A 500ns | total: 7340 pcs маг ДП: 7340 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | SOD123-FL | ||||
| 036055 |  | Diode 1A, 1000V | total: 82450 pcs маг ДП: 82450 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | SMAF | |||||
| 037637 | | Diode 1A 1000V | total: 13050 pcs маг ДП: 13050 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | SOD123-FL | ||||
| 037643 | | Diode | total: 44500 pcs маг ДП: 44500 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 70 нс | SMAF | ||||
| 007192 | | Schottky diode 1.1A 100V | total: 150 pcs маг ДП: 150 pcs |
| IR | Диод Шоттки | Diode | Одиночный | 1.1 А | 100 V | DO204AL |
Rectifier diodes- diodes designed to convert alternating current into direct current.
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
