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Whole catalog
↠ Active ingredients
↠ Transistors, modules
↠ Field effect transistors
Transistor STP4NK60ZFP N-ch Vds=600V Id25=4A Rds=2Ohm
from 1 pc :
—
10,75
UAH
from 50 pcs :
—
9,67
UAH
( -10,0%)
from 200 pcs :
—
8,60
UAH
( -20,0%)
Магазин-Днепр
835 pcs
For Online Orders
835 pcs
Производитель
ST Microelectronics (STM)
Корпус
TO220F
Структура
N
Схема соединения
Одиночный
V(BR)DSS - напряжение пробоя сток-исток
600 V
Vgs - напряжение затвор-исток
±30 V
Id25 - постоянный ток стока при 25°C
4 А
Id75(100) - постоянный ток стока при 75(100)°C
2.5 А
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=10V
1.7 Ом
VGS(th) - пороговое напряжение затвор-исток (типовое)
3.75 V
VGS(th) - пороговое напряжение затвор-исток (диапазон)
3 ... 4.5 V
Мощность рассеяния при 25°C
25 Вт
The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.
If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП
unknown
contacts
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